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| LESHAN RADIO COMPANY, LTD. Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. * Low RDS(on) Provides Higher Efficiency and Extends Battery Life * Miniature SOT-23 Surface Mount Package Saves Board Space MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 20 750 2000 400 - 55 to 150 300 260 Unit Vdc Vdc LMGSF1N02LT1 3 1 2 SOT-23 N-Channel 3 -- 1 mA mW C C/W C 2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) V(BR)DSS IDSS - - IGSS - - - - 1.0 10 100 nAdc 20 - - Vdc Adc Symbol Min Typ Max Unit DEVICE MARKING LMGSF1N02LT1=N2 LMGSF1N02LT1-1/4 LESHAN RADIO COMPANY, LTD. LMGSF1N02LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (See Figure 6) SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2.) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. IS ISM VSD - - - - - 0.8 0.6 0.75 - V A (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT - - - - - 2.5 1.0 16 8.0 6000 - - - - - pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss - - - 125 120 45 - - - pF VGS(th) rDS(on) - - 0.075 0.115 0.090 0.130 1.0 1.7 2.4 Vdc Ohms Symbol Min Typ Max Unit TYPICAL ELECTRICAL CHARACTERISTICS 2.5 I D , DRAIN CURRENT (AMPS) 2 1.5 1 -55C TJ = 150C 3 I D , DRAIN CURRENT (AMPS) 2.5 2 VGS = 3.0 V 1.5 1 0.5 3 3.5 0 2.75 V 2.5 V 2.25 V 0 1 2 3 4 5 6 7 8 9 10 4V 3.5 V 3.25 V VDS = 10 V 0.5 0 25C 1 1.5 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On-Region Characteristics LMGSF1N02LT1-2/4 LESHAN RADIO COMPANY, LTD. LMGSF1N02LT1 R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -55C VGS = 4.5 V 25C 150C 0.14 0.13 0.12 0.11 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 25C -55C VGS = 10 V 150C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current Figure 4. On-Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -55 -5 45 95 145 VGS = 4.5 V ID = 1 A VGS = 10 V ID = 2 A 10 8 6 4 2 0 VDS = 16 V TJ = 25C ID = 2.0 A 0 1000 2000 3000 4000 5000 6000 TJ, JUNCTION TEMPERATURE (C) QT, TOTAL GATE CHARGE (pC) Figure 5. On-Resistance Variation with Temperature Figure 6. Gate Charge 1 I D , DIODE CURRENT (AMPS) 1000 VGS = 0 V f = 1 MHz TJ = 25C Ciss Coss Crss 0.1 C, CAPACITANCE (pF) TJ = 150C 25C -55C 100 0.01 0.001 0 0.2 0.4 0.6 0.8 1 10 0 5 10 15 20 VSD, DIODE FORWARD VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (Volts) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance LMGSF1N02LT1-3/4 LESHAN RADIO COMPANY, LTD. LMGSF1N02LT1 SOT-23 NOTES: A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LMGSF1N02LT1-4/4 |
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